Semiconductor structure and method of manufacture

ABSTRACT

A semiconductor structure and method for forming the semiconductor are provided. The semiconductor structure includes a first electrode comprising a first portion, a second portion, and a sheet portion connecting the first portion to the second portion. A ferroelectric material is over the sheet portion. A second electrode is over the ferroelectric material.

RELATED APPLICATION

This application is a continuation of and claims priority to U.S.Non-Provisional application Ser. No. 17/394,456, titled “SEMICONDUCTORSTRUCTURE AND METHOD OF MANUFACTURE” and filed on Aug. 5, 2021, whichclaims priority to U.S. Provisional Application Ser. No. 63/179,157,titled “SEMICONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURE” and filedon Apr. 23, 2021. U.S. Non-Provisional application Ser. No. 17/394,456and U.S. Provisional Application Ser. No. 63/179,157 are incorporatedherein by reference.

BACKGROUND

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, challenges from both fabrication and design issues haveresulted in the development of three dimensional designs, such asgate-all-around (GAA) transistors. A GAA transistor comprises one ormore nano-sheet or nano-wire channel regions having a gate wrappedaround the nano-sheet or nano-wire. GAA transistors can reduce the shortchannel effect.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-16, 18, and 20 are illustrations of a semiconductor structure atvarious stages of fabrication, in accordance with some embodiments.

FIG. 17 is a circuit diagram of a bit cell, in accordance with someembodiments.

FIG. 19 is a circuit diagram of adjacent bit cells, in accordance withsome embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and structures are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper”, and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the Figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe Figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

One or more techniques for fabricating a semiconductor structure areprovided herein. In some embodiments, the semiconductor structurecomprises a nano-structure transistor and a nano-structure memorystructure. As used herein, nano-structure devices, such as anano-structure transistor or a nano-structure memory structure, refer tosubstantially flat, nearly two-dimensional structures, such as sometimesreferred to as nano-sheets, as well as structures having two-dimensionsthat are similar in magnitude, such as sometimes referred to asnano-wires. Nano-sheet devices may have rectangular cross-sections andnano-wire devices may have elliptical cross-sections. A rectangularcross-section includes a square cross-section, and an ellipticalcross-section includes a circular-cross section. In some embodiments,the nano-structure transistor and the nano-structure memory structureare formed in an integrated process flow. One or more of thenano-structure transistor and one or more of the nano-structure memorystructure may be formed on different substrates, and a wafer bondingprocess may be performed to stack the nano-structure transistor(s) overthe nano-structure memory structure(s).

FIGS. 1-9 are illustrations of a semiconductor structure 100 at variousstages of fabrication, in accordance with some embodiments. FIGS. 1-9include a simplistic plan view showing where various cross-sectionalviews are taken. Referring to FIG. 1 , the view X-X is a cross-sectionalview taken through the semiconductor structure 100 in a directioncorresponding to a gate width direction through nano-structures formedin different regions, and the views Y1-Y1 and Y2-Y2 are cross-sectionalviews taken through the semiconductor structure 100 in a directioncorresponding to a gate length direction through gate structures. Notall aspects of the processing shown in the cross-sectional views will bedepicted in the plan view. In some embodiments, the structures shown inview Y1-Y1 are formed in a first region 102A of the semiconductorstructure 100, and the structures shown in view Y2-Y2 are formed in asecond region 102B of the semiconductor structure 100. The first region102A may comprise transistor devices, and the second region 102B maycomprise memory structures.

Referring to FIG. 1 , a plurality of layers used in the formation of thesemiconductor structure 100 are illustrated, in accordance with someembodiments. The plurality of layers is formed over a semiconductorlayer 105. In some embodiments, the semiconductor layer 105 is part of asubstrate comprising at least one of an epitaxial layer, a singlecrystalline semiconductor material such as, but not limited to Si, Ge,SiGe, InGaAs, GaAs, InSb, GaP, GaSb, InAlAs, GaSbP, GaAsSb, and InP, asilicon-on-insulator (SOI) structure, a wafer, or a die formed from awafer. The semiconductor layer 105 may also comprise crystallinesilicon.

In some embodiments, a logic stack 110A and a memory stack 110B areformed by forming a first stack of semiconductor layers and performingan etch process to remove some of the first stack of semiconductorlayers, thereby defining the logic stack 110A and the memory stack 110B.The logic stack 110A and the memory stack 110B may comprise channelsemiconductor layers 115A, 115B and sacrificial semiconductor layers120A, 120B. The materials of the channel semiconductor layers 115A, 115Bmay be different than the materials of the sacrificial semiconductorlayers 120A, 120B to provide etch selectivity and allow removal of thesacrificial semiconductor layers 120A, 120B. In some embodiments, aspacing between adjacent logic stacks 110A (only one is shown) isbetween about 8-15 nm, and a spacing between adjacent memory stacks 110B(only one is shown) is between about 10-20 nm.

In some embodiments, an etch stop layer 124 is embedded in thesemiconductor layer 105. An implant process may be performed to form theetch stop layer 124 in the semiconductor layer 105 or an epitaxialgrowth process may be performed to form the etch stop layer 124 over thesemiconductor layer 105 and an additional portion of the semiconductorlayer 105P is grown over the etch stop layer 124. The etch stop layermay comprise the same material as one of the sacrificial semiconductorlayers 120A, 120B.

In some embodiments, the channel semiconductor layers 115A, 115Bcomprise the same material composition, and the sacrificialsemiconductor layers 120A, 120B comprise the same material composition.The channel semiconductor layers 115A, 115B may comprise substantiallypure silicon, and the sacrificial semiconductor layers 120A, 120B maycomprise silicon-germanium (Si_(x)Ge_((1-x)), where x ranges from 0.25to 0.85). In other embodiments, the channel semiconductor layers 115A,115B comprise SiGe and the sacrificial semiconductor layers 120A, 120Bcomprise silicon or SiGe with a different alloy concentration than thechannel semiconductor layers 115A, 115B.

In some embodiments, the channel semiconductor layers 115A, 115B aredifferent materials, and the sacrificial semiconductor layers 120A, 120Bare different materials. The channel semiconductor layers 115A maycomprise substantially pure silicon, and the channel semiconductorlayers 115B may comprise silicon-germanium (Si_(x)Ge_((1-x)), where xranges from 0.25 to 0.85). The sacrificial semiconductor layers 120A,120B may comprise different alloy concentrations of Ge to provide etchselectivity with respect to the channel semiconductor layers 115A, 115B.

In some embodiments, the number of channel semiconductor layers 115A,115B and the number of sacrificial semiconductor layers 120A, 120B aremore than three. The order of the channel semiconductor layers 115A,115B and the sacrificial semiconductor layers 120A, 120B may vary.Thicknesses of the channel semiconductor layers 115A, 115B and thesacrificial semiconductor layers 120A, 120B may vary, and thethicknesses need not be the same. For example, the thicknesses of thechannel semiconductor layers 115A, 115B and the sacrificialsemiconductor layers 120A, 120B may decrease from the bottommost layersto the topmost layers.

In some embodiments, during the etch process to remove some of the stackof the channel semiconductor layers 115A, 115B and the sacrificialsemiconductor layers 120A, 120B or during a subsequent etch process, aportion of the semiconductor layer 105 is etched to define a recessbetween the logic stack 110A and the memory stack 110B. An isolationstructure 117, such as shallow trench isolation (STI), may be formed inthe recess. The isolation structure 117 may be formed by depositing adielectric layer between the adjacent logic stacks 110A and the adjacentmemory stacks 110B and recessing the dielectric layer to expose at leastportions of sidewalls of the logic stack 110A and the memory stack 110B.The isolation structure 117 comprises silicon and oxygen or othersuitable dielectric materials.

A region 119 represents a demarcation between the first region 102A andthe second region 102B. The region 119 may comprise an isolationstructure. In some embodiments, the first region 102A is not immediatelyadjacent the second region 102B, and other structures may be present inthe region 119. The first region 102A may be on one substrate and thesecond region 102B may be on another substrate.

In some embodiments, sacrificial gate structures 122 are formed over thelogic stack 110A and the memory stack 110B and over the isolationstructure 117. The sacrificial gate structures 122 may comprise a firstgate dielectric layer 125 and sacrificial gate electrodes 130A, 130B.The first gate dielectric layer 125 comprises a high-k dielectricmaterial or other suitable dielectric material. As used herein, the term“high-k dielectric” refers to the material having a dielectric constant,k, greater than or equal to about 3.9, which is the k value of SiO₂. Thehigh-k dielectric material may be any suitable material. Examples of thehigh-k dielectric material include but are not limited to Al₂O₃, HfO₂,ZrO₂, La₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃, Al₂O_(x)N_(y), HfO_(x)N_(y),ZrO_(x)N_(y), La₂O_(x)N_(y), TiO_(x)N_(y), SrTiO_(x)N_(y),LaAlO_(x)N_(y), Y₂O_(x)N_(y), SiON, SiN_(X), a silicate thereof, and analloy thereof. Each value of x is independently from 0.5 to 3, and eachvalue of y is independently from 0 to 2.

In some embodiments, the first gate dielectric layer 125 comprises anative oxide layer formed by exposure of the semiconductor structure 100to oxygen at various points in the process flow, causing the formationof silicon dioxide on exposed surfaces of the logic stack 110A and thememory stack 110B. An additional layer of dielectric material, such as ahigh-k dielectric material or other suitable material, may be formedover the native oxide to form the first gate dielectric layer 125. Thesacrificial gate structures 122 may be formed by forming a layer ofsacrificial material and a hard mask layer over the logic stack 110A andthe memory stack 110B and the isolation structure 117. A patterningprocess may be performed to pattern the hard mask layer corresponding tothe pattern of sacrificial gate structures 122 to be formed, and an etchprocess is performed using the patterned hard mask layer to etch asacrificial layer to define the sacrificial gate electrodes 130A, 130Bformed from the sacrificial layer, such as from a polysilicon layer.Remaining portions of the hard mask layer may form cap layers 135 overthe sacrificial gate electrodes 130A, 130B.

In some embodiments, sidewall spacers 140 are formed adjacent thesacrificial gate structures 122. The sidewall spacers 140 may be formedby depositing a conformal spacer layer over the sacrificial gatestructures 122 and performing an anisotropic etch process to removeportions of the conformal spacer layer positioned on horizontal surfacesof the cap layers 135, the logic stack 110A, the memory stack 110B, andthe isolation structure 117. The sidewall spacers 140 may comprise thesame material composition as the cap layer 135. The sidewall spacers 140may comprise nitrogen and silicon or other suitable materials.

Referring to FIG. 2 , the channel semiconductor layers 115A, 115B andthe sacrificial semiconductor layers 120A, 120B are etched using thesidewall spacers 140 and the sacrificial gate structures 122 as an etchmask, in accordance with some embodiments.

Referring to FIG. 3 , end spacers 126 are formed adjacent ends of thesacrificial semiconductor layers 120A, 120B, source/drain regions 145A,145B are formed in the logic stack 110A and the memory stack 110B, and adielectric layer 150 is formed over the logic stack 110A and the memorystack 110B and adjacent the sacrificial gate structures 122, inaccordance with some embodiments. After forming the logic stack 110A andthe memory stack 110B, an isotropic etch process is performed to recessthe sacrificial semiconductor layers 120A, 120B to define end cavities.A deposition process is performed to form a dielectric spacer layer overthe logic stack 110A and the memory stack 110B and an isotropic etchprocess is performed to remove portions of the dielectric spacer layeroutside the end cavities to define the end spacers 126. The end spacers126 comprise a low-k dielectric material, for example, SiON, SiOCN,SiCN, SiOC, or some other suitable material. The end spacers 126 maycomprise the same material composition as the sidewall spacers 140.

In some embodiments, the source/drain regions 145A, 145B are formed inthe logic stack 110A and the memory stack 110B after forming thesacrificial gate structures 122 and after forming the end spacers 126.An epitaxial growth process may be performed to form the source/drainregions 145A, 145B. The source/drain regions 145A, 145B comprise SiP,SiC, or some other suitable material for an n-type device. Thesource/drain regions 145A, 145B comprise SiGe, SiB, or some othersuitable material for a p-type device.

In some embodiments, the dielectric layer 150 is formed over the logicstack 110A and the memory stack 110B and adjacent the sacrificial gatestructures 122 after forming the source/drain regions 145. A portion ofthe dielectric layer 150 may be removed, such as by planarization, toexpose the cap layers 135. The dielectric layer 150 comprises silicondioxide, a low-k dielectric material, one or more layers of low-kdielectric material, or some other suitable dielectric material. Thematerials for the dielectric layer 150 comprise at least one of Si, 0,C, or H, such as SiCOH and SiOC, or other suitable materials. Organicmaterial such as polymers may be used for the dielectric layer 150. Thedielectric layer 150 may comprise one or more layers of acarbon-containing material, organo-silicate glass, a porogen-containingmaterial, or combinations thereof. The dielectric layer 150 may alsocomprise nitrogen. The dielectric layer 150 may be formed by using, forexample, at least one of low pressure chemical vapor deposition (CVD)(LPCVD), atomic layer CVD (ALCVD), or a spin-on technology.

Referring to FIG. 4 , the cap layers 135 are removed and heights of thesidewall spacers 140 and the dielectric layer 150 are reduced, inaccordance with some embodiments. In some embodiments, a planarizationprocess is performed to remove the cap layers 135 and to reduce theheights of the sidewall spacers 140 and the dielectric layer 150. Theplanarization process exposes the sacrificial gate electrodes 130A,130B. The planarization process may be a continuation of the processperformed to planarize the dielectric layer 150.

Referring to FIG. 5 , the sacrificial gate electrode 130A and the firstgate dielectric layer 125 are removed in the first region 102A to definea gate cavity 155A and expose portions of the logic stack 110A, inaccordance with some embodiments. In some embodiments, a mask 160 isformed over the second region 102B to prevent removal of the sacrificialgate electrode 130B in the second region 102B. An etch process isperformed to remove the sacrificial gate electrode 130A and the firstgate dielectric layer 125. The etch process may be a wet etch processselective to the material of the sacrificial gate electrode 130A and thematerial of the first gate dielectric layer 125.

Referring to FIG. 6 , at least some of the sacrificial semiconductorlayers 120A are removed to define intermediate cavities 132A between thechannel semiconductor layers 115A, in accordance with some embodiments.An etch process, such as a wet etch process, is performed to remove thesacrificial semiconductor layers 120A.

Referring to FIG. 7 , the mask 160 is removed and a gate structure 165Ais formed in the gate cavity 155A and the intermediate cavities 132A, inaccordance with some embodiments. In some embodiments, the gatestructure 165A comprises a gate dielectric layer 170A, a work functionmaterial layer 175A, and a gate electrode layer 180A. The gatedielectric layer 170A may comprise a high-k dielectric material. Thegate dielectric layer 170A may comprise a native oxide layer formed byexposure of the semiconductor structure 100 to oxygen at various pointsin the process flow, causing the formation of silicon dioxide on exposedsurfaces of the channel semiconductor layers 115A. An additional layerof dielectric material, such as a high-k dielectric material or othersuitable material, is formed over the native oxide to form the gatedielectric layer 170A. The work function material layer 175A comprisesTiN, TaN, WN, MoN, or some other suitable material for a p-type device,or AlC, TiAlC, TaAlC, TiSi, TaSi, WSi, CoSi, NiSi, or some othersuitable material for an n-type device. The gate electrode layer 180Acomprises a metal fill layer, such as tungsten (W) or other suitablematerial. The gate dielectric layer 170A, the work function materiallayer 175A, and/or the gate electrode layer 180A, and any other suitablelayers of the gate structure 165A may be deposited by at least one ofatomic layer deposition (ALD), physical vapor deposition (PVD), CVD, orother suitable processes. According to some embodiments, a planarizationprocess is performed to remove portions of the material forming the gatestructure 165A positioned over the dielectric layer 150. The gatestructure 165A comprises a GAA gate structure.

Referring to FIG. 8 , the sacrificial gate electrode 130B and the firstgate dielectric layer 125 are removed in the second region 102B todefine a gate cavity 155B and expose portions of the memory stack 110B,in accordance with some embodiments. In some embodiments, an etchprocess, such as a wet etch process selective to the material of thesacrificial gate electrode 130B and the material of the first gatedielectric layer 125, is performed to remove the sacrificial gateelectrode 130B and the first gate dielectric layer 125.

Referring to FIG. 9 , at least some of the sacrificial semiconductorlayers 120B are removed to define intermediate cavities 132B between thechannel semiconductor layers 115B, in accordance with some embodiments.An etch process, such as a wet etch process, is performed to remove thesacrificial semiconductor layers 120B.

Referring to FIG. 10 , a memory element 165B is formed in the gatecavity 155B and the intermediate cavities 132B, in accordance with someembodiments. In some embodiments, the memory element 165B comprises aferroelectric layer 170B, a work function material layer 175B, and anelectrode layer 180B. The ferroelectric layer 170B comprises a materialthat exhibits spontaneous polarization in the presence of a magneticfield. The spontaneous polarization is persistent and reversible,allowing the ferroelectric layer 170B to function as a non-volatilememory storage layer. The ferroelectric layer 170B may be crystallizedand have an orthorhombic phase. The ferroelectric layer 170B maycomprise HfZrO, where the element ratios may vary. The HfZrO materialmay be formed using an ALD process using HfCl and ZrCl precursor gases.The ferroelectric layer 170B may comprise a native oxide layer formed byexposure of the semiconductor structure 100 to oxygen at various pointsin the process flow, causing the formation of silicon dioxide on exposedsurfaces of the channel semiconductor layers 115B. A layer offerroelectric material is formed over the native oxide to form theferroelectric layer 170B. In some embodiments, the ALD process isperformed using an artificial intelligence controlled process. Aproportion of Zr in the HfZrO material may be between about 40% and 60%,and the ferroelectric layer 170B may have a thickness greater than about3 nm. By controlling the proportion of Zr in the HfZrO material to bewithin the aforementioned range and the ferroelectric layer 170B to havea thickness greater than about 3 nm, the HfZrO has an orthorhombic phasethat provides the HfZrO with ferromagnetic properties suitable for usein memory devices. The proportion of Zr in the HfZrO material and thethickness of the ferroelectric layer 170B are selected to enablereversibility of the polarity of the ferroelectric material. Theferroelectric layer 170B may have a thickness that varies. For example,a thickness of the ferroelectric layer 170B may be greater in a bottomregion of the intermediate cavities 132B than in a top region of theintermediate cavities 132B and/or the gate cavity 155B.

The work function material layer 175B comprises TiN, AlC, or some othersuitable material. The electrode layer 180B may comprise a metal filllayer, such as tungsten (W) or other suitable material. The workfunction material layer 175B, and/or the electrode layer 180B, and anyother suitable layers of the memory element 165B may be deposited by atleast one of ALD, PVD, CVD, or other suitable processes. A planarizationprocess is performed to remove portions of the material forming thememory element 165B positioned over the dielectric layer 150.

Referring to FIG. 11 , the gate structure 165A and the memory element165B are recessed and cap layers 185A, 185B are formed over the gatestructure 165A and the memory element 165B, respectively, in accordancewith some embodiments. The gate structure 165A and the memory element165B are recessed using an etch process. The cap layers 185A, 185B areformed using a deposition process. In some embodiments, the cap layers185A, 185B comprise dielectric materials, such as materials comprisingsilicon and nitrogen, silicon and oxygen, or other suitable materials.

Referring to FIG. 12 , openings 190 are formed in the dielectric layer150 to expose the source/drain regions 145B, in accordance with someembodiments. In some embodiments, an etch process is performed topattern the dielectric layer 150 using a mask as an etch template toform the openings 190. The etch process comprises at least one of aplasma etch process, a reactive ion etching (RIE) process, or othersuitable techniques. The etch process comprises an anisotropic etchprocess in accordance with some embodiments.

Referring to FIG. 13 , the source/drain regions 145B, the channelsemiconductor layers 115B, and a portion of the semiconductor layer 105over the etch stop layer 124 are removed to define a cavity 195including intermediate cavities 195A, in accordance with someembodiments. An etch process, such as a wet etch process, is performedto remove the source/drain regions 145B, the channel semiconductorlayers 115B, and the portion of the semiconductor layer 105P. The etchstop layer 124 serves as an etch barrier to define a boundary of theportion of the semiconductor layer 105P removed.

Referring to FIG. 14 , an electrode 200 is formed in the openings 190and in the cavity 195. In some embodiments, the electrode 200 comprisesa channel semiconductor material 205 and a contact 210. The channelsemiconductor material 205 may comprise indium gallium zinc oxide (IGZO)or be doped with aluminum. The contact 210 may comprise a work functionmaterial layer 210A and a fill layer 210B. The work function materiallayer 210A comprises TiN or some other suitable material. The fill layer210B comprises tungsten or other suitable material. The channelsemiconductor material 205, the work function material layer 210A,and/or the fill layer 210B may be deposited by ALD or other suitableprocesses. The ALD process may be performed using an artificialintelligence controlled process. The channel semiconductor material 205may fill the openings 190 and the cavity 195 and an etch process may beperformed to form recesses in the channel semiconductor material 205.The work function material layer 210A and the fill layer 210B are formedin the recesses in the channel semiconductor material 205 and aplanarization process is performed to remove portions of the workfunction material layer 210A and the fill layer 210B positioned over thedielectric layer 150. In some embodiments, the electrode 200 comprises asheet portion 200A formed in the intermediate cavities 195A, a firstportion 200B, and a second portion 200C connected to the first portion200B by the sheet portion 200A.

Referring to FIG. 15 , source/drain contacts 215A, 215B are formed inthe dielectric layer 150 over the source/drain regions 145A, inaccordance with some embodiments. Openings are formed in the dielectriclayer 150 to expose the source/drain regions 145A. In some embodiments,an etch process is performed to pattern the dielectric layer 150 using amask as an etch template to form contact openings for the source/drainregions 145A. The etch process comprises at least one of a plasma etchprocess, a reactive ion etching (RIE) process, or other suitabletechniques. The etch process comprises an anisotropic etch process inaccordance with some embodiments. The source/drain contacts 215A, 215Bmay comprise a barrier layer and a metal fill layer (not separatelyshown). The barrier layer comprises TiN, AlC, or another suitablematerial. The metal fill layer comprises W, Co, Ru, Mo, Jr, or anothersuitable material. Silicide regions 220 may be formed in thesource/drain regions 145A prior to forming the source/drain contacts215A, 215B. The silicide regions 220 are formed by depositing aconformal layer of a refractory metal in the contact openings. Therefractory metal comprises at least one of Ti, Ni, Co, Pd, Pt, or othersuitable materials. An annealing process is performed to cause therefractory metal to react with underlying silicon-containing material inthe source/drain regions 145A to form the silicide regions, which are ametal silicide, and an etch process is performed to remove unreactedportions of the layer of refractory metal. In some embodiments, anadditional annealing process is performed to form a final phase of themetal silicide.

Referring to FIG. 16 , a first metallization layer comprising adielectric layer 225 and conductive vias 230A, 230B, 230C, 230D, 230E,230F and a second metallization layer comprising a dielectric layer 235and conductive lines 240A, 240B, 240C, 240D, 240E are formed over thedielectric layer 150, the gate structure 165A, and the memory element165B, in accordance with some embodiments. The conductive vias 230A,230B, 230C, 230D, 230E and the conductive lines 240A, 240B, 240C, 240D,240E are formed in any number of ways, such as by a single damasceneprocess, a dual damascene process, a trench silicide process, and/orother suitable techniques. In some embodiments, the conductive vias230A, 230B, 230C, 230D, 230E and the conductive lines 240A, 240B, 240C,240D, 240E comprise a barrier layer, a seed layer, a metal fill layer,and/or other suitable layers. The metal fill layer comprises W, Al, Cu,Co, and/or other suitable materials. Other structures and/orconfigurations of the conductive vias 230A, 230B, 230C, 230D, 230E andthe conductive lines 240A, 240B, 240C, 240D, 240E are within the scopeof the present disclosure. A portion of the cap layer 185A, 185B may beremoved in the region where the conductive vias 230B, 230D interfacewith the gate electrode layer 180A and the electrode layer 180B,respectively. A cap layer (not visible) may be formed over the electrode200, on portions located into and out of the page and not contacted bythe conductive vias 230B, 230C, 230D.

According to some embodiments, the portion of the semiconductorstructure 100 in the first region 102A comprises a transistor 245, andthe portion of the semiconductor structure 100 in the second region 102Bcomprises a memory structure 250. The conductive via 230A and theconductive line 240A contact the source/drain contact 215A, theconductive via 230B and the conductive line 240B contact the gateelectrode layer 180A (after removal of a portion of the cap layer 185A),the conductive vias 230C, 230E and the conductive lines 240C, 240Econtact the contacts 210, and the conductive via 230D and the conductiveline 240D contact the electrode layer 180B (after removal of a portionof the cap layer 185A). In some embodiments, a cap layer (not visible)is formed over the contacts 210 and the source/drain contacts 215A, 215Bon portions located into and out of the page and not contacted by theconductive vias 230A, 230C, 230D, 230F. The cap layer is removed and theconductive vias 230A, 230C, 230D, and 230F extend into the region wherethe cap layer was removed.

Referring to FIG. 17 , a circuit diagram of a bit cell 300 including thetransistor 245 and the memory structure 250 is shown, according to someembodiments. The transistor 245 serves as an access device for thememory structure 250. In some embodiments, the conductive line 240Aserves as a bit line, the conductive line 240D serves as a word line,and the conductive line 240E serves as a common ground line.

Referring to FIG. 18 , according to some embodiments, the transistor 245is formed on a first substrate 315A, the memory structure 250 is formedon a second substrate 315B, and a bonding process is performed on thefirst substrate 315A and the second substrate 315B to stack thetransistor 245 over the memory structure 250. A redistribution layer 255is formed between the transistor 245 and the memory structure 250 toelectrically couple the transistor 245 and the memory structure 250. Insome embodiments, the redistribution layer 255 comprises a dielectriclayer 260, a conductive via 265, a conductive line 270, and a conductivevia 275. A hybrid bonding may be performed using the redistributionlayer 255 as the bonding interface. The conductive via 265 may contactthe conductive line 240D, and the conductive via 275 contacts thesource/drain region 145A of the transistor 245. A signal on a word linecoupled to the conductive via 240B enables the transistor 245 and passesthe signal on the word line through the source/drain region 145A,through the conductive via 275, the conductive line 270, the conductivevia 265, the conductive line 240D, and the conductive via 230D to theelectrode layer 180B to enable the memory structure 250. The valuestored in the memory structure 250 is read through a bit line coupled tothe conductive line 240C.

Referring to FIG. 19 , a circuit diagram of adjacent bit cells 300A,300B including transistors 245A, 245B and memory structures 250A, 250Bis shown, according to some embodiments. The transistors 245A, 245Bserve as access devices for the respective memory structures 250A, 250B.In some embodiments, the conductive line 240E serves as a common groundline that is shared by the memory structures 250A, 250B.

Referring to FIG. 20 , according to some embodiments, the transistors245A, 245B are formed on a first substrate 310A, the memory structures250A, 250B are formed on second substrate 310B, and a bonding process isperformed on the first substrate 315A and the second substrate 315B tostack the transistors 245A, 245B over the memory structures 250A, 250Busing the redistribution layer 255. Note that the electrode 200 isshared by both memory structures 250A, 250B and the conductive line 240Eserves as a common ground line for both memory structures 250A, 250B.

The transistor 245 and the memory structure 250 employ nano-structuresthat are formed using an integrated process flow. Stacking thetransistor 245 and the memory structure 250 increases density. Processintegration and increased density tend to increase device performanceand value.

In some embodiments, a method for forming a semiconductor structureincludes forming a first nano-structure device including a channelregion and a sacrificial region. A second nano-structure deviceincluding a channel region and a sacrificial region is formed. A gatestructure is formed over the channel region of the first nano-structuredevice. A memory element is formed adjacent the channel region of thesecond nano-structure device. The channel region of the secondnano-structure device is replaced with a first electrode.

In some embodiments, a method for forming a semiconductor structureincludes forming a first stack including a first semiconductor layer, asecond semiconductor layer over the first semiconductor layer, and athird semiconductor layer over the second semiconductor layer. The firststack is patterned to define a memory stack. A first sacrificial gateelectrode is formed over the memory stack. A first source/drain regionis formed adjacent the memory stack. A dielectric layer is formedadjacent the first sacrificial gate electrode and over the memory stack.The first sacrificial gate electrode is removed to define a first gatecavity in the dielectric layer and to expose a first portion of thesecond semiconductor layer in the memory stack. The first portion of thesecond semiconductor layer in the memory stack is removed to define afirst intermediate cavity between the first semiconductor layer and thethird semiconductor layer. A ferroelectric layer is formed in the firstgate cavity and the first intermediate cavity. A first electrode isformed in the first gate cavity and the first intermediate cavity overthe ferroelectric layer. An opening is formed in the dielectric layer toexpose the first source/drain region. The first source/drain region, thefirst semiconductor layer, and the third semiconductor layer arereplaced with a second electrode.

In some embodiments, a semiconductor structure includes a firstelectrode comprising a first portion, a second portion, and a sheetportion connecting the first portion to the second portion. Aferroelectric material is over the sheet portion. A second electrode isover the ferroelectric material.

The foregoing outlines features of several embodiments so that those ofordinary skill in the art may better understand various aspects of thepresent disclosure. Those of ordinary skill in the art should appreciatethat they may readily use the present disclosure as a basis fordesigning or modifying other processes and structures for carrying outthe same purposes and/or achieving the same advantages of variousembodiments introduced herein. Those of ordinary skill in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure.

Although the subject matter has been described in language specific tostructural features or methodological acts, it is to be understood thatthe subject matter of the appended claims is not necessarily limited tothe specific features or acts described above. Rather, the specificfeatures and acts described above are disclosed as example forms ofimplementing at least some of the claims.

Various operations of embodiments are provided herein. The order inwhich some or all of the operations are described should not beconstrued to imply that these operations are necessarily orderdependent. Alternative ordering will be appreciated having the benefitof this description. Further, it will be understood that not alloperations are necessarily present in each embodiment provided herein.Also, it will be understood that not all operations are necessary insome embodiments.

It will be appreciated that layers, features, elements, etc. depictedherein are illustrated with particular dimensions relative to oneanother, such as structural dimensions or orientations, for example, forpurposes of simplicity and ease of understanding and that actualdimensions of the same differ substantially from that illustratedherein, in some embodiments. Additionally, a variety of techniques existfor forming the layers, regions, features, elements, etc. mentionedherein, such as at least one of etching techniques, planarizationtechniques, implanting techniques, doping techniques, spin-ontechniques, sputtering techniques, growth techniques, or depositiontechniques such as chemical vapor deposition (CVD), for example.

Moreover, “exemplary” is used herein to mean serving as an example,instance, illustration, etc., and not necessarily as advantageous. Asused in this application, “or” is intended to mean an inclusive “or”rather than an exclusive “or”. In addition, “a” and “an” as used in thisapplication and the appended claims are generally be construed to mean“one or more” unless specified otherwise or clear from context to bedirected to a singular form. Also, at least one of A and B and/or thelike generally means A or B or both A and B. Furthermore, to the extentthat “includes”, “having”, “has”, “with”, or variants thereof are used,such terms are intended to be inclusive in a manner similar to the term“comprising”. Also, unless specified otherwise, “first,” “second,” orthe like are not intended to imply a temporal aspect, a spatial aspect,an ordering, etc. Rather, such terms are merely used as identifiers,names, etc. for features, elements, items, etc. For example, a firstelement and a second element generally correspond to element A andelement B or two different or two identical elements or the sameelement.

Also, although the disclosure has been shown and described with respectto one or more implementations, equivalent alterations and modificationswill occur to others of ordinary skill in the art based upon a readingand understanding of this specification and the annexed drawings. Thedisclosure comprises all such modifications and alterations and islimited only by the scope of the following claims. In particular regardto the various functions performed by the above described components(e.g., elements, resources, etc.), the terms used to describe suchcomponents are intended to correspond, unless otherwise indicated, toany component which performs the specified function of the describedcomponent (e.g., that is functionally equivalent), even though notstructurally equivalent to the disclosed structure. In addition, while aparticular feature of the disclosure may have been disclosed withrespect to only one of several implementations, such feature may becombined with one or more other features of the other implementations asmay be desired and advantageous for any given or particular application.

What is claimed is:
 1. A semiconductor structure, comprising: a firstelectrode extending between a first end spacer and a second end spacer;a ferroelectric material extending between the first end spacer and thesecond end spacer, wherein the ferroelectric material is below the firstelectrode and above the first electrode; and a second electrode, whereinthe second electrode is spaced apart from the first electrode on a firstside of the first electrode by the first end spacer, is spaced apartfrom the first electrode on a second side of the first electrode by thesecond end spacer, is spaced apart from the first electrode on a bottomof the first electrode by the ferroelectric material and is spaced apartfrom the first electrode on a top of the first electrode by theferroelectric material.
 2. The semiconductor structure of claim 1,comprising: a work function metal layer extending between the first endspacer and the second end spacer.
 3. The semiconductor structure ofclaim 2, wherein the work function metal layer is between the firstelectrode and the ferroelectric material.
 4. The semiconductor structureof claim 1, wherein the ferroelectric material is in direct contact withthe second electrode.
 5. The semiconductor structure of claim 1, whereinthe ferroelectric material comprises HfZrO.
 6. The semiconductorstructure of claim 1, wherein a material of the ferroelectric materialis selected to have an orthorhombic phase.
 7. The semiconductorstructure of claim 1, comprising: a sidewall spacer, wherein thesidewall spacer is between the first electrode and a contact of thesecond electrode.
 8. The semiconductor structure of claim 7, comprising:a dielectric layer, wherein the dielectric layer is between the sidewallspacer and the contact of the second electrode.
 9. The semiconductorstructure of claim 7, wherein the ferroelectric material is between thefirst electrode and the sidewall spacer.
 10. The semiconductor structureof claim 1, wherein the second electrode comprises a channelsemiconductor material and a contact.
 11. The semiconductor structure ofclaim 10, wherein the channel semiconductor material comprises indiumgallium zinc oxide.
 12. The semiconductor structure of claim 10, whereinthe contact comprises a work function material layer and a fill layer.13. A semiconductor structure, comprising: a first electrode; aferroelectric material; a sidewall spacer, wherein the ferroelectricmaterial is between the first electrode and the sidewall spacer; and asecond electrode, wherein the sidewall spacer is between the secondelectrode and the ferroelectric material.
 14. The semiconductorstructure of claim 13, comprising: a work function material layerbetween the first electrode and the ferroelectric material.
 15. Thesemiconductor structure of claim 13, wherein: the second electrodecomprises a contact and a channel semiconductor material, the sidewallspacer is between the contact and the ferroelectric material, and thechannel semiconductor material is between a first portion of the firstelectrode and a second portion of the first electrode.
 16. Thesemiconductor structure of claim 15, wherein: the ferroelectric materialunderlies the first portion of the first electrode, the channelsemiconductor material underlies the ferroelectric material, and thesecond portion of the first electrode underlies the channelsemiconductor material.
 17. A method of forming a semiconductorstructure, comprising: forming a first source/drain region and a secondsource/drain region, wherein a channel semiconductor material extendsbetween the first source/drain region and the second source/drainregion; removing the first source/drain region, the second source/drainregion, and the channel semiconductor material to expose a ferroelectricmaterial; and forming a first electrode over the ferroelectric materialand under the ferroelectric material.
 18. The method of claim 17,wherein: the ferroelectric material is between a first end spacer and asecond end spacer, and removing the first source/drain region, thesecond source/drain region, and the channel semiconductor materialexposes the first end spacer and the second end spacer.
 19. The methodof claim 18, wherein forming the first electrode comprises forming thefirst electrode adjacent to the first end spacer.
 20. The method ofclaim 17, comprising: forming a second electrode and the ferroelectricmaterial after forming the first source/drain region and the secondsource/drain region and before removing the first source/drain region,the second source/drain region, and the channel semiconductor material.